KSP55

KSP55/56

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KSP55/56

KSP55/56
Amplifier Transistor
Collector-Emitter Voltage: VCEO KSP55: 60V KSP56: 80V Collector Power Dissipation: PC (max) 625mW Complement to KSP05/06

TO-92

1. Emitter 2. Base 3. Collector

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VCBO Parameter Collector-Base Voltage : KSP55 : KSP56 VCEO Collector-Emitter Voltage : KSP55 : KSP56 VCEO IC PC TJ TSTG Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature -60 -80 -4 -500 625 150 -55 150 V V V mA mW C C -60 -80 V V Value Units

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : KSP55 : KSP56 Emitter-Base Breakdown Voltage Collector Cut-off Current : KSP55 : KSP56 ICEO h FE VCE (sat) VBE (on) fT Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product VCB -60V, IE 0 VCB -80V, IE 0 VCE -60V, IB 0 VCE -1V, IC -10mA VCE -1V, IC -100mA IC -100mA, IB -10mA VCE -1V, IC -100mA VCE -2V, IC -10mA f 100MHz 50 50 50 -0.25 -1.2 V V MHz -0.1 -0.1 -0.1 A A A Test Condition IC -1mA, IB 0 IE -100 A, IC 0 Min. -60 -80 -4 Max. Units V V

BVEBO ICBO

Pulse Test: PW300 s, Duty Cycle2%

2002 Fairchild Semiconductor Corporation

Rev. A2, September 2002