KSP62/63/64

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KSP62/63/64

KSP62/63/64
Darlington Transistor
Collector-Emitter Voltage: VCES KSP62: 20V KSP63/64: 30V Collector Power Dissipation: PC (max) 625mW
1

TO-92

1. Emitter 2. Base 3. Collector

PNP Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VCBO Parameter Collector-Base Voltage : KSP62 : KSP63/64 VCEO Collector-Emitter Voltage : KSP62 : KSP63/64 VEBO IC PC TJ TSTG Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature -20 -30 -10 -500 625 150 -55 150 V V V mA mW C C -20 -30 V V Value Units

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol BVCES Parameter Collector-Emitter Breakdown Voltage : KSP62 : KSP63/64 Collector Cut-off Current : KSP62 : KSP63/64 IEBO hFE Emitter Cut-off Current DC Current Gain : KSP62 : KSP63 : KSP64 : KSP63 : KSP64 VCE (sat) Collector-Emitter Saturation Voltage : KSP62 : KSP63/64 Base-Emitter On Voltage : KSP62 : KSP63/64 Current Gain Bandwidth Product : KSP63/64 VCE -5V, IC -10mA 20K 5K 10K 10K 20K -1.0 -1.5 -1.4 -2 125 V V V V MHz VCB -15V, IE 0 VCB -30V, IE 0 VBE -10V, IC 0 -100 -100 -100 nA nA nA Test Condition IC -100 A, IB 0 Min. -20 -30 Max. Units V V

ICBO

VCE -5V, IC -100mA

IC -10mA, IB -0.01mA IC -100mA, IB -0.1mA VCE -5V, IC -10mA VCE -5V, IC -100mA VCE -5V, IC -100mA f 100MHz

VBE (on)

fT

Pulse Test: PW300 s, Duty Cycle2%

2002 Fairchild Semiconductor Corporation

Rev. A2, September 2002

KSP62 Datasheet Fairchild Download PDF

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KSP62 DATASHEET