KSP6521

KSP6520/6521

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KSP6520/6521

KSP6520/6521
Amplifier Transistor
Collector-Emitter Voltage: VCEO 25V Collector Power Dissipation: PC (max) 625mW

TO-92

1. Emitter 2. Base 3. Collector

NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value 40 25 4 100 625 150 -55 150 Units V V V mA mW C C

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol BVCEO BVEBO ICBO hFE Parameter Collector-Emitter Breakdown Voltage Emitter Base Breakdown Voltage Collector Cut-off Current DC Current Gain : KSP6520 : KSP6521 : KSP6520 : KSP6521 VCE (sat) Cob NF Collector-Emitter Saturation Voltage Output Capacitance Noise Figure IC 100 A, VCE 10V IC 2mA, VCE 10V IC 50mA, IB 5mA VCB 10V, IE 0 f 100KHz IC 10 A, VCE 5V RS 10K f 10Hz to 10KHz 100 150 200 300 Test Condition IC 0.5mA, IB 0 IC 10, IC 0 VCB 30V, IE 0 VCE 20V, IE 0 Min. 25 4 50 50 Typl Max. Units V V nA nA

400 600 0.5 3.5 3 V pF dB

2002 Fairchild Semiconductor Corporation

Rev. B1, September 2002