KSP76

KSP75/76/77

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KSP75/76/77

KSP75/76/77
Darlington Transistor
Collector-Emitter Voltage: VCES KSP75: 40V KSP76: 50V KSP77: 60V Collector Power Dissipation: PC (max) 625mW TO-92

1. Emitter 2. Base 3. Collector

PNP Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VCES Parameter Collector-Base Voltage : KSP75 : KSP76 : KSP77 VEBO IC PC TJ TSTG Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature -40 -50 -60 -10 -500 625 150 -55 150 V V V V mA mW C C Value Units

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol BVCEO Parameter Collector-Base Breakdown Voltage : KSP75 : KSP76 : KSP77 Collector-Base Breakdown Voltage : KSP75 : KSP76 : KSP77 Collector Cut-off Current : KSP75 : KSP76 : KSP77 IEBO ICES Emitter Cut-off Current Collector Cut-off Current : KSP75 : KSP76 : KSP77 hFE VCE (sat) VBE (on) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage VCE -30V, IE 0 VCE -40V, IE 0 VCE -50V, IE 0 VCE -5V, IC -10mA VCE -5V, IC -100mA IC -100mA, IB -0.1mA VCE -5V, IC -100mA 10K 10K -1.5 2 V V -500 -500 -500 nA nA nA VCE -30V, IE 0 VCE -40V, IE 0 VCE -50V, IE 0 VCE -10V, IB 0 -100 -100 -100 -100 Test Condition IC -100 A, IB 0 Min. -40 -50 -60 IC -100 A, IE 0 -40 -50 -60 V V V nA nA nA nA nA Max. Units V V V

BVCBO

ICBO

2001 Fairchild Semiconductor Corporation

Rev. A1, July 2001