KSP8098/8099

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KSP8098/8099

KSP8098/8099
Amplifier Transistor
Collector-Emitter Voltage: VCEO KSP8098: 60V KSP8099: 80V Collector Power Dissipation: PC (max) 625mW Suffix "-C" means Center Collector (1. Emitter 2. Collector 3. Base)
1

TO-92

1. Emitter 2. Base 3. Collector

NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VCBO Parameter Collector-Base Voltage : KSP8098 : KSP8099 VCEO Collector-Emitter Voltage : KSP8098 : KSP8099 VEBO IC PC TJ TSTG Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature 60 80 6 500 625 150 -55 150 V V V mA mW C C 60 80 V V Value Units

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol BVCBO Parameter Collector-Base Breakdown Voltage : KSP8098 : KSP8099 Collector-Emitter Breakdown Voltage : KSP8098 : KSP8099 Emitter-Base Breakdown Voltage Collector Cut-off Current : KSP8098 : KSP8099 ICEO IEBO hFE Collector Cut-off Current Emitter Cut-off Current DC Current Gain VCB 60V, IE 0 VCB 80V, IE 0 VCE 60V, IB 0 VEB 6V, IC 0 VCE 5V, IC 1mA VCE 5V, IC 10mA VCE 5V, IC 100mA IC 100mA, IB 5mA IC 100mA, IB 10mA VCE 5V, IC 1mA VCE 5V, IC 10mA VCE 5V, IC 10mA f 100MHz VCB 5V, IE 0 f 1MHz 0.5 0.6 150 6 100 100 75 100 100 100 100 300 nA nA nA nA Test Condition IC 100 A, IE 0 Min. 60 80 IC 10mA, IB 0 60 80 IE 10 A, IC 0 6 V V V Max. Units V V

BVCEO

BVEBO ICBO

VCE (sat) VBE (on)

Collector-Emitter Saturation Voltage Base-Emitter On Voltage : KSP8098 : KSP8099

0.4 0.3 0.7 0.8

V V V V MHz pF

fT Cob

Current Gain Bandwidth Product Output Capacitance

Pulse Test: Pulse Width300 s, Duty Cycle2%

2001 Fairchild Semiconductor Corporation

Rev. A1, July 2001

KSP8099 Datasheet Fairchild Download PDF

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KSP8099 DATASHEET