KSP8598/8599

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KSP8598/8599

KSP8598/8599
Amplifier Transistor
Collector-Emitter Voltage: VCEO KSP8598: 60V KSP8599: 80V Collector Power Dissipation: PC (max) 625mW Suffix "-C" means Center Collector (1. Emitter 2. Collector 3. Base)
1

TO-92

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VCBO Parameter Collector-Base Voltage : KSP8598 : KSP8599 VCEO Collector-Emitter Voltage : KSP8598 : KSP8599 VEBO IC PC TJ TSTG Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature

1. Emitter 2. Base 3. Collector

Value -60 -80 -60 -80 -5 -500 625 150 -55 150

Units V V V V V mA mW C C

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol BVCBO Parameter Collector-Base Breakdown Voltage : KSP8598 : KSP8599 Collector-Emitter Breakdown Voltage : KSP8598 : KSP8599 Emitter-Base Breakdown Voltage Collector Cut-off Current : KSP8598 : KSP8599 Collector Cut-off Current Emitter Cut-off Current DC Current Gain Test Condition IC -100 A, IE 0 Min. -60 -80 IC -10mA, IB 0 -60 -80 IE -10 A, IC 0 VCB -60V, IE 0 VCB -80V, IE 0 VCE -60V, IB 0 VEB -4V, IC 0 VCE -5V, IC -1mA VCE -5V, IC -10mA VCE -5V, IC -100mA IC -100mA, IB -5mA IC -100mA, IB -10mA VCE -5V, IC -1mA VCE -5V, IC -10mA VCE -5V, IC -10mA f 100MHz VCB -5V, IE 0 f 1MHz -0.5 -0.6 150 8 100 100 75 -5 -100 -100 -100 -100 300 V V V nA nA nA nA Max. Units V V

BVCEO

BVEBO ICBO

ICEO IEBO hFE

VCE (sat) VBE (on)

Collector-Emitter Saturation Voltage Base-Emitter On Voltage : KSP8598 : KSP8599 Current Gain Bandwidth Product Output Capacitance

-0.4 -0.3 -0.7 -0.8

V V V V MHz pF

fT Cob

Pulse Test: Pulse Width300 s, Duty Cycle2%

2001 Fairchild Semiconductor Corporation

Rev. A1, July 2001

KSP8599 Datasheet Fairchild Download PDF

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KSP8599 DATASHEET