KSP92

KSP92/93

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KSP92/93

KSP92/93
High Voltage Transistor

1

TO-92

1. Emitter 2. Base 3. Collector

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VCBO Parameter Collector-Base Voltage : KSP92 : KSP93 VCEO Collector-Emitter Voltage : KSP92 : KSP93 VEBO IC PC PC TJ TSTG Emitter-Base Voltage Collector Current Collector Power Dissipation (Ta 25 C) Derate above 25 C Collector Power Dissipation (TC 25 C) Derate above 25 C Junction Temperature Storage Temperature -300 -200 -5 -500 625 5 1.5 12 150 -55 150 V V V mA mW mW/ C W mW/ C C C -300 -200 V V Value Units

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol BVCBO Parameter Collector-Base Breakdown Voltage : KSP92 : KSP93 Collector-Emitter Breakdown Voltage : KSP92 : KSP93 Emitter-Base Breakdown Voltage Collector Cur-off Current : KSP92 : KSP93 IEBO hFE Emitter Cut-off Current DC Current Gain VCB -200V, IE 0 VCB -160V, IE 0 VEB -3V, IC 0 VCE -10V, IC -1mA VCE -10V, IC -10mA VCE -10V, IC -30mA IC -20mA, IB -2mA IC -20mA, IB -2mA VCE -20V, IC -10mA, f 100MHz VCB -20V, IE 0 f 1MHz 50 6 8 25 40 25 -0.50 -0.90 V V MHz pF pF -0.25 -0.25 -0.10 A A A Test Condition IC -100 A, IE 0 Min. -300 -200 IC -1mA, IB 0 -300 -200 IE -100 A, IC 0 -5 V V V Max. Units V V

BVCEO

BVEBO ICBO

VCE (sat) VBE (sat) fT Cob

Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance : KSP92 : KSP93

Pulse Test: PW300 s, Duty Cycle2%

2001 Fairchild Semiconductor Corporation

Rev. A1, July 2001

KSP92 Datasheet Fairchild Download PDF

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