KSP94

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KSP94

KSP94
High Voltage Transistor
High Collector-Emitter Voltage: VCEO -400V Low Collector-Emitter Saturation Voltage Complement to KSP44

TO-92

1. Emitter 2. Base 3. Collector

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value -400 -400 -6 -300 625 150 -55 150 Units V V V mA mW C C

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol BVCBO BVCES BVEBO ICBO ICES IEBO hFE1 hFE2 hFE3 hFE4 VCE (sat)1 VCE (sat)2 VBE (sat) Cob Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Test Condition IC -100 A, IE 0 IC -100 A, VBE 0 IE -10 A, IC 0 VCB -300V, VE 0 VCE -400V, VBE 0V VBE -4V, IC 0 VCE -10V, IC -1mA VCE -10V, IC -10mA VCE -10V, IC -50mA VCE -10V, IC -100mA IC -10mA, IB -1mA IC -50mA, IB -5mA IC -10mA, IB -1mA VCB -20V, IE 0, f 1MHz 7 40 50 45 40 Min. -400 -400 -6 -100 -1 -100 300 Typ. Max. Units V V V nA A nA

Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance

-500 -750 -750

mV mV mV pF

2002 Fairchild Semiconductor Corporation

Rev. A2, July 2002