MB1S - MB8S

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MB1S - MB8S

MB1S - MB8S
Features
Low leakage Surge overload rating: 35 amperes peak. Ideal for printed circuit board. UL certified, UL E96005.
4 3

SOIC-4
Polarity symbols molded or marking on body
1

2

Bridge Rectifiers
Absolute Maximum Ratings
Symbol
VRRM VRMS VR IF(AV) IFSM Tstg TJ
TA 25 C unless otherwise noted

Parameter
1S Maximum Repetitive Reverse Voltage Maximum RMS Bridge Input Voltage DC Reverse Voltage (Rated VR) Average Rectified Forward Current, TA 50 C Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave Storage Temperature Range Operating Junction Temperature 100 70 100 2S 200 140 200

Value
4S 400 280 400 0.5 35 -55 to 150 -55 to 150 6S 600 420 600 8S 800 560 800

Units
V V V A A C C

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Thermal Characteristics
Symbol
PD RJA RJL Power Dissipation Thermal Resistance, Junction to Ambient, per leg Thermal Resistance, Junction to Lead, per leg

Parameter

Value
1.4 85 20

Units
W C/W C/W

Device mounted on PCB with 0.5-0.5" (13x13 mm) lead length.

Electrical Characteristics
Symbol
VF IR

TA 25 C unless otherwise noted

Parameter
Forward Voltage, per bridge 0.5 A Reverse Current, per leg rated VR I2t rating for fusing t 8.3 ms TA 25 C TA 125 C

Device
1.0 5.0 0.5 5.0 13

Units
V A mA A2s pF

CT

Total Capacitance, per leg VR 4.0 V, f 1.0 MHz

2007 Fairchild Semiconductor Corporation

MB1S-MB8S, Rev. D

MB2S Datasheet Fairchild Download PDF

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