MBR1050

MBR1035-MBR1060

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MBR1035-MBR1060

MBR1035 - MBR1060
Features
Low power loss, high efficiency. High surge capacity. For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop. Guard ring for over voltage protection.
PIN 1 PIN 2 CASE Positive CASE

TO-220AC

Schottky Rectifiers
Absolute Maximum Ratings
Symbol
VRRM IF(AV) IFSM Tstg TJ
TA 25 C unless otherwise noted

Parameter
1035 Maximum Repetitive Reverse Voltage Average Rectified Forward Current Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave Storage Temperature Range Operating Junction Temperature 35

Value
1045 45 10 150 -65 to 175 -65 to 150 1050 50 1060 60

Units
V A A C C

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Thermal Characteristics
Symbol
PD RJA RJL Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead

Parameter

Value
2.0 60 2.0

Units
W C/W C/W

Electrical Characteristics
Symbol
VF Forward Voltage

TA 25 C unless otherwise noted

Parameter
1035 IF 10 A, TC 25 C IF 10 A, TC 125 C IF 20 A, TC 25 C IF 20 A, TC 125 C Reverse Current rated VR TA 25 C TA 125 C Peak Repetitive Reverse Surge Current 2.0 us Pulse Width, f 1.0 KHz 0.57 0.84 0.72

Device
1045 1050 0.80 0.70 0.95 0.85 0.1 15 1.0 0.5 1060

Units
V V V V mA mA A

IR IRRM

2001 Fairchild Semiconductor Corporation

MBR1035 - MBR1060, Rev. C