MBR1560CT

MBR1535CT- MBR1560CT

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MBR1535CT- MBR1560CT

MBR1535CT - MBR1560CT
Features
Low power loss, high efficiency. High surge capacity. For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop. Guarding for over voltage protection.

PIN 1 PIN 3 CASE PIN 2

1 2 3

TO-220AB

Schottky Rectifiers
Absolute Maximum Ratings
Symbol
VRRM IF(AV) IFSM Tstg TJ
TA 25 C unless otherwise noted

Parameter
1535 Maximum Repetitive Reverse Voltage Average Rectified Forward Current .375 " lead length TA 105 C Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave Storage Temperature Range Operating Junction Temperature 35

Value
1545 45 15 150 -65 to 175 -65 to 150 1550 50 1560 60

Units
V A A C C

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Thermal Characteristics
Symbol
PD RJA RJL Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead

Parameter

Value
41.7 60 3.0

Units
W C/W C/W

Electrical Characteristics
Symbol
VF

TA 25 C unless otherwise noted

Parameter
1535 Forward Voltage IF 7.5 A, TC 25 C IF 7.5 A, TC 125 C IF 15 A, TC 25 C IF 15 A, TC 125 C Reverse Current rated VR TA 25 C TA 125 C Peak Repetitive Reverse Surge Current 2.0 us Pulse Width, f 1.0 KHz 0.57 0.84 0.72 0.1 15 1.0

Device
1545 1550 1560 0.75 0.65 1.0 50 0.5

Units
V V V V mA mA A

IR IRRM

2001 Fairchild Semiconductor Corporation

MBR1535CT - MBR1560CT, Rev. C