MBR1645

MBR1635 - MBR1660

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MBR1635 - MBR1660

MBR1635 - MBR1660
Features
Low power loss, high efficiency. High surge capacity. For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop. Guard ring for over voltage protection.

PIN 1 PIN 2 CASE Positive CASE

TO-220AC

Schottky Rectifiers
Absolute Maximum Ratings
Symbol
VRRM IF(AV) IFSM Tstg TJ
TA 25 C unless otherwise noted

Parameter
1635 Maximum Repetitive Reverse Voltage Average Rectified Forward Current .375 " lead length TA 125 C Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave Storage Temperature Range Operating Junction Temperature 35 45

Value
1645 1650 50 16 150 -65 to 175 -65 to 150 1660 60

Units
V A A C C

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Thermal Characteristics
Symbol
PD RJA RJL

Parameter
Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead

Value
2.0 60 1.5

Units
W C/W C/W

Electrical Characteristics
Symbol
VF IR IRRM Forward Voltage

TA 25 C unless otherwise noted

Parameter
1635 IF 16 A, TC 25 C IF 16 A, TC 125 C Reverse Current rated VR TA 25 C TA 125 C Peak Repetitive Reverse Surge Current 2.0 us Pulse Width, f 1.0 KHz 0.63 0.57 0.2 40 1.0

Device
1645 1650 0.75 0.65 1.0 50 0.5 1660

Units
V V mA mA A

2001 Fairchild Semiconductor Corporation

MBR1635 - MBR1660 Rev. C