MBR2550CT

MBR2535CT - MBR2560CT

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MBR2535CT - MBR2560CT

MBR2535CT - MBR2560CT
Features
Low power loss, high efficiency. High surge capacity. For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop. Guard ring for over voltage protection.
PIN 1 PIN 3 CASE PIN 2

1 2 3

TO-220AB

Schottky Rectifiers
Absolute Maximum Ratings
Symbol
VRRM IF(AV) IFSM Tstg TJ
TA 25 C unless otherwise noted

Parameter
2535CT Maximum Repetitive Reverse Voltage Average Rectified Forward Current .375 " lead length TA 130 C Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave Storage Temperature Range Operating Junction Temperature 35 45

Value
2545CT 2550CT 50 30 150 -65 to 175 -65 to 150 2560CT 60

Units
V A A C C

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Thermal Characteristics
Symbol
PD RJA RJL PowerDissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead

Parameter

Value
2.0 60 1.5

Units
W C/W C/W

Electrical Characteristics
Symbol
VF

TA 25 C unless otherwise noted

Parameter
2535CT Forward Voltage IF 15 A, TC 25 C IF 15 A, TC 125 C IF 30 A, TC 25 C IF 30 A, TC 125 C Reverse Current rated VR TA 25 C TA 125 C Peak Repetitive Reverse Surge Current 2.0 us Pulse Width, f 1.0 KHz 0.82 0.73 0.2 40 1.0

Device
2545CT 2550CT 2560CT 0.75 0.65 1.0 50 0.5

Units
V V V V mA mA A

IR IRRM

2001 Fairchild Semiconductor Corporation

MBR2535CT - MBR2560CT, Rev. C