MBR3050PT

MBR3035PT - MBR3060PT

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MBR3035PT - MBR3060PT

MBR3035PT - MBR3060PT
Features
Low power loss, high efficiency. High surge capacity. For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop. Guard ring for over voltage protection.
PIN 1 PIN 3 CASE PIN 2

TO-3P/TO-247AD

Schottky Rectifiers
Absolute Maximum Ratings
Symbol
VRRM IF(AV) IFSM Tstg TJ
TA 25 C unless otherwise noted

Parameter
3035PT Maximum Repetitive Reverse Voltage Average Rectified Forward Current Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave Storage Temperature Range Operating Junction Temperature 35

Value
3045PT 45 30 200 -65 to 175 -65 to 150 3050PT 50 3060PT 60

Units
V A A C C

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Thermal Characteristics
Symbol
PD RJL

Parameter
Power Dissipation Thermal Resistance, Junction to Lead

Value
3.0 1.4

Units
W C/W

Electrical Characteristics
Symbol
VF

TA 25 C unless otherwise noted

Parameter
3035PT Forward Voltage IF 20 A, TC 25 C IF 20 A, TC 125 C IF 30 A, TC 25 C IF 30 A, TC 125 C Reverse Current rated VR TA 25 C TA 125 C Peak Repetitive Reverse Surge Current 2.0 us Pulsu Width, f 1.0 KHz 0.60 0.76 0.72 1.0 60 1.0

Device
3045PT 3050PT 3060PT 0.75 0.65 5.0 100 0.5

Units
V V V V mA mA A

IR IRRM

2001 Fairchild Semiconductor Corporation

MBR3035PT - MBR3060PT, Rev. C