MBR4045PT

MBR4035PT-MBR4060PT

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MBR4035PT-MBR4060PT

MBR4035PT - MBR4060PT
Features
Low power loss, high efficiency. High surge capacity. For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop. Guard ring for over voltage protection.

PIN 1 PIN 3 CASE PIN 2

TO-3P/TO-247AD

Schottky Rectifiers
Absolute Maximum Ratings
Symbol
VRRM IF(AV) IFSM Tstg TJ
TA 25 C unless otherwise noted

Parameter
4035PT Maximum Repetitive Reverse Voltage Average Rectified Forward Current .375 " lead length TA 125 C Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave Storage Temperature Range Operating Junction Temperature 35 45

Value
4045PT 4050PT 50 40 400 -65 to 175 -65 to 150 4060PT 60

Units
V A A C C

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Thermal Characteristics
Symbol
PD RJL Power Dissipation Thermal Resistance, Junction to Lead

Parameter

Value
3.0 1.2

Units
W C/W

Electrical Characteristics
Symbol
VF

TA 25 C unless otherwise noted

Parameter
4035PT Forward Voltage IF 20 A, TC 25 C IF 20 A, TC 125 C IF 40 A, TC 25 C IF 40 A, TC 125 C Reverse Current rated VR TA 25 C TA 125 C Peak Repetitive Reverse Surge Current 2.0 us Pulse Width, f 1.0 KHz 0.70 0.60 0.80 0.75

Device
4045PT 4050PT 4060PT 0.72 0.62 1.0 100 2.0 1.0

Units
V V V V mA mA A

IR IRRM

2001 Fairchild Semiconductor Corporation

MBR4035PT - MBR4060PT, Rev. C