MBR735

MBR735 - MBR760

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MBR735 - MBR760

MBR735 - MBR760
Features
Low power loss, high efficiency. High surge capacity. For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop. Guard ring for over voltage protection.

PIN 1 PIN 2 CASE Positive CASE

Dimensions are in: inches (mm)

TO-220AC

Schottky Rectifiers
Absolute Maximum Ratings
Symbol
VRRM IF(AV) IFSM Tstg TJ
TA 25 C unless otherwise noted

Parameter
735 Maximum Repetitive Reverse Voltage Average Rectified Forward Current Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave Storage Temperature Range Operating Junction Temperature 35 45

Value
745 7.5 150 -65 to 175 -65 to 150 750 50 760 60

Units
V A A C C

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Thermal Characteristics
Symbol
PD RJA RJL

Parameter
Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead

Value
2.0 60 3.0

Units
W C/W C/W

Electrical Characteristics
Symbol
VF

TA 25 C unless otherwise noted

Parameter
735 Forward Voltage IF 7.5 A, TC 25 C IF 7.5 A, TC 125 C IF 15 A, TC 25 C IF 15 A, TC 125 C Reverse Current rated VR TA 25 C TA 125 C Peak Repetitive Reverse Surge Current 2.0 us Pulse Width, f 1.0 KHz 0.57 0.84 0.72 0.1 15 1.0

Device
745 750 0.75 0.65 0.5 50 0.5 760

Units
V V V V mA mA A

IR IRRM

2001 Fairchild Semiconductor Corporation

MBR735 - MBR760, Rev. C