MJD112

MJD112 NPN Silicon Darlington Transistor

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MJD112 NPN Silicon Darlington Transistor

November 2006

MJD112
NPN Silicon Darlington Transistor Features
High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications (No Suffix)
Equivalent Circuit C

D-PAK 2.Collector 3.Emitter
R1 R2 E

1.Base

R1 10k R2 0.6k

Absolute Maximum Ratings
Symbol
VCBO VCEO VEBO IC ICP IB PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current

Ta 25 C unless otherwise noted

Parameter

Value
100 100 5 2 4 50 20 1.75 150 - 65 150

Units
V V V A A mA W W C C

Collector Dissipation (TC 25 C) Collector Dissipation (Ta 25 C) Junction Temperature Storage Temperature

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol
VCEO(sus) ICEO ICBO IEBO hFE

Parameter
Collector-Emitter Sustaining Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain

Test Condition
IC 30mA, IB 0 VCE 50V, IB 0 VCB 100V, IB 0 VEB 5V, IC 0 VCE 3V, IC 0.5A VCE 3V, IC 2A VCE 3V, IC 4A IC 2A, IB 8mA IC 4A, IB 40mA IC 4A, IB 40mA VCE 3A, IC 2A VCE 10V, IC 0.75A VCB 10V, IE 0 f 0.1MHz

Min.
100

Max.
20 20 2

Units
V A A mA

500 1000 200

12K 2 3 4 2.8 V V V V MHz 100 pF

VCE(sat) VBE(sat) VBE(on) fT Cob

Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance

Pulse Test: Pulse Width300 s, Duty Cycle2%

2006 Fairchild Semiconductor Corporation

www.fairchildsemi.com

MJD112 Rev. B