MJD117

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MJD117

MJD117
D-PAK for Surface Mount Applications
High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, " - I " Suffix) Electrically Similar to Popular TIP117

D-PAK 1.Base

I-PAK 3.Emitter

2.Collector

PNP Silicon Darlington Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC 25 C) Collector Dissipation (Ta 25 C) Junction Temperature Storage Temperature Value - 100 - 100 -5 -2 -4 - 50 20 1.75 150 - 65 150 Units V V V A A mA W W C C
R1 R2 E B Equivalent Circuit C

R 1 10 k R 2 0.6 k

Electrical Characteristics TC 25 C unless otherwise noted
Symbol VCEO (sus) ICEO ICBO IEBO hFE Parameter Collector-Emitter Sustaining Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Test Condition IC - 30mA, IB 0 VCE - 50V, IB 0 VCB - 100V, IE 0 VEB - 5V, IC 0 VCE - 3V, VEB - 0.5A VCE - 3V, VEB - 2A VCE - 3V, IC - 4A IC -2A, IB - 8mA IC - 4A, IB - 40mA IC - 4A, IB - 40mA VCE - 3A, IC - 2A VCE -10V, IC - 0.75A VCB - 10V, IE 0 f 0.1MHz 25 200 500 1000 200 Min. - 100 Max. - 20 - 20 -2 12K -2 -3 -4 - 2.8 V V V V MHz pF Units V A A mA

VCE(sat) VBE(sat) VBE(on) fT Cob

Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter ON Voltage Current Gain Bandwidth Product Output Capacitance

Pulse Test: PW300 s, Duty Cycle2%

2001 Fairchild Semiconductor Corporation

Rev. A2, June 2001