MJD127

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MJD127

MJD127
D-PAK for Surface Mount Applications
High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, " - I " Suffix) Electrically Similar to Popular TIP127 Complement to MJD122

D-PAK 1.Base

I-PAK 3.Emitter

2.Collector

PNP Silicon Darlington Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC 25 C) Collector Dissipation (Ta 25 C) Junction Temperature Storage Temperature Value - 100 - 100 -5 -8 - 16 - 120 20 1.75 150 - 65 150 Units V V V A A mA W W C C
R1 R2 E B Equivalent Circuit C

R 1 8 k R 2 0.12 k

Electrical Characteristics TC 25 C unless otherwise noted
Symbol VCEO(sus) ICEO ICBO IEBO hFE VCE(sat) VBE(sat) VBE(on) Cob Parameter Collector-Emitter Sustaining Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter ON Voltage Output Capacitance Test Condition IC - 30mA, IB 0 VCE - 50V, IB 0 VCB - 100V, IE 0 VEB - 5V, IC 0 VCE - 4V, IC - 4A VCE - 4V, VEB -8A IC - 4A, IB - 16mA IC - 8A, IB - 80mA IC - 8A, IB - 80mA VCE -4V, IC - 4A VCB - 10V, IE 0 f 0.1MHz 1000 100 Min. - 100 Max. - 10 - 10 -2 12K -2 -4 - 4.5 - 2.8 300 V V V V pF Units V A A mA

Pulse Test: PW300 s, Duty Cycle2%

2001 Fairchild Semiconductor Corporation

Rev. A2, June 2001