MJD210

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MJD210

MJD210
D-PAK for Surface Mount Applications
High DC Current Gain Low Collector Emitter Saturation Voltage Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, " - I " Suffix)

1

D-PAK 1.Base

1

I-PAK 3.Emitter

2.Collector

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Peck Current (Pulse) Base Current Collector Dissipation (TC 25 C) Collector Dissipation (Ta 25 C) Junction Temperature Storage Temperature Value - 40 - 25 -8 -5 - 10 -1 12.5 1.4 150 - 65 150 Units V V V A A A W W C C

Electrical Characteristics TC 25 C unless otherwise noted
Symbol VCEO(sus) ICBO IEBO hFE Parameter Collector-Emitter Sustaining Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Test Condition IC - 10mA, IB 0 VCB - 40V, IE 0 VEBO - 8V, IC 0 VCE - 1V, IC - 500mA VCE - 1V, IC - 2A VCE - 2V, IC - 5A IC - 500mA, IB - 50mA IC - 2A, IB - 200mA IC - 5A, IB - 1A IC - 5A, IB - 1A VCE - 1V, IC - 2A VCE - 10V, IC - 100mA VCB - 10V, IE 0, f 0.1MHz 65 120 70 45 10 Min. -25 Max. -100 -100 180 -0.3 -0.75 -1.8 -2.5 -1.6 V V V V V MHz pF Units V nA nA

VCE(sat)

Collector-Emitter Saturation Voltage

VBE(sat) VBE(on) fT Cob

Base-Emitter Saturation Voltage Base-Emitter ON Voltage Current Gain Bandwidth Product Output Capacitance

Pulse Test: PW300 s, Duty Cycle2%

2001 Fairchild Semiconductor Corporation

Rev. A2, June 2001

MJD210 Datasheet Fairchild Download PDF

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MJD210 DATASHEET