MJD31C

MJD31/31C

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MJD31/31C

MJD31/31C
General Purpose Amplifier Low Speed Switching Applications
Load Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK, "- I" Suffix) Electrically Similar to Popular TIP31 and TIP31C
1

D-PAK 1.Base

I-PAK 3.Emitter

2.Collector

NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO Parameter Collector-Base Voltage : MJD31 : MJD31C VCEO Collector-Emitter Voltage : MJDH31 : MJD31C Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC 25 C) Collector Dissipation (Ta 25 C) TJ TSTG Junction Temperature Storage Temperature 40 100 40 100 5 3 1 1 15 1.56 150 - 65 150 V V V V V A A A W W C C Value Units

VEBO IC ICP IB PC

Electrical Characteristics TC 25 C unless otherwise noted
Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : MJD31 : MJD31C Collector Cut-off Current : MJD31 : MJD31C ICES Collector Cut-off Current : MJD31 : MJD31C IEBO hFE VCE(sat) VBE(on) fT Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Current Gain Bandwidth Product VCE 40V, VBE 0 VCE 100V, VBE 0 VBE 5V, IC 0 VCE 4V, IC 1A VCE 4V, IC 3A IC 3A, IB 375mA VCE 4A, IC 3A VCE 10V, IC 500mA 3 25 10 20 20 1 50 1.2 1.8 V V MHz A A mA VCE 40V, IB 0 VCE 60V, IB 0 50 50 A A Test Condition IC 30mA, IB 0 Min. 40 100 Max. Units V V

ICEO

Pulse Test: PW300 s, Duty Cycle2%

2001 Fairchild Semiconductor Corporation

Rev. A2, June 2001