MJD32C

MJD32/32C

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MJD32/32C

MJD32/32C
General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications
Load Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK, "- I" Suffix) Electrically Similar to Popular TIP32 and TIP32C
1

D-PAK 1.Base

I-PAK 3.Emitter

2.Collector

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO Parameter Collector-Base Voltage : MJD32 : MJD32C VCEO Collector-Emitter Voltage : MJD32 : MJD32C Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC 25 C) Collector Dissipation (Ta 25 C) TJ TSTG Junction Temperature Storage Temperature Value - 40 - 100 - 40 - 100 -5 -3 -5 -1 15 1.56 150 - 65 150 Units V V V V V A A A W W C C

VEBO IC ICP IB PC

Electrical Characteristics TC 25 C unless otherwise noted
Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : MJD32 : MJD32C Collector Cut-off Current : MJD32 : MJD32C ICES Collector Cut-off Current : MJD32 : MJD32C IEBO hFE VCE(sat) VBE(on) fT Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Current Gain Bandwidth Product VCE - 40V, VBE 0 VCE - 100V, VBE 0 VBE - 5V, IC 0 VCE - 4V, IC - 1A VCE - 4V, IC - 3A IC - 3, IB - 375mA VCE - 4A, IC - 3A VCE -10V, IC - 500mA 3 25 10 -20 -20 -1 50 -1.2 -1.8 V V MHz A A mA VCE - 40V, IB 0 VCE - 60V, IB 0 -50 -50 A A Test Condition IC - 30mA, IB 0 Min. -40 -100 Max. Units V V

ICEO

Pulse Test: PW300 s, Duty Cycle2%

2001 Fairchild Semiconductor Corporation

Rev. A2, June 2001