MJD350

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MJD350

MJD350
High Voltage Power Transistors D-PAK for Surface Mount Applications
Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, "- I" Suffix)
1

D-PAK 1.Base

I-PAK 3.Emitter

2.Collector

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation (TC 25 C) Collector Dissipation (Ta 25 C) Junction Temperature Storage Temperature Value - 300 - 300 -3 - 0.5 - 0.75 15 1.56 150 - 65 150 Units V V V A A W W C C

Electrical Characteristics TC 25 C unless otherwise noted
Symbol VCEO(sus) ICEO IEBO hFE Parameter Collector-Emitter Sustaining Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Test Condition IC 1mA, IB 0 VCB -300V, IE 0 VEB -3V, IC 0 VCE -10V, IC -50mA 30 Min. -300 Max. -0.1 -0.1 240 Units V mA mA

Pulse Test: PW300 s, Duty Cycle2%

2001 Fairchild Semiconductor Corporation

Rev. A2, June 2001