MJD44H11

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MJD44H11

MJD44H11
General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications
Load Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK, "- I" Suffix) Electrically Similar to Popular MJE44H Fast Switching Speeds Low Collector Emitter Saturation Voltage
1

D-PAK 1.Base

I-PAK 3.Emitter

2.Collector

NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector-Current (Pulse) Collector Dissipation (TC 25 C) Collector Dissipation (Ta 25 C) Junction Temperature Storage Temperature Value 80 5 8 16 20 1.75 150 - 65 150 Units V V A A W W C C

Electrical Characteristics TC 25 C unless otherwise noted
Symbol VCEO(sus) ICEO IEBO hFE VCE(sat) VBE(on) fT Cob tON tSTG tF Parameter Collector-Emitter Sustaining Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Current Gain Bandwidth Product Output Capacitance Turn ON Time Storage Time Fall Time Test Condition IC 30mA, IB 0 VCE 80V, IB 0 VBE 5V, IC 0 VCE 1V, IC 2A VCE 1V, IC 4A IC 8A, IB 0.4A IC 8A, IB 0.8A VCE 10V, IC 0.5A VCB 10V, f 1MHz IC 5A IB1 - IB2 0.5A 50 130 300 500 140 60 40 1 1.5 V V MHz pF ns ns ns Min. 80 Typ. Max. 10 50 Units V A A

Pulse Test: PW300 s, Duty Cycle2%

2001 Fairchild Semiconductor Corporation

Rev. A2, June 2001