MJD47TF

MJD47/50

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MJD47/50

MJD47/50
High Voltage and High Reliability D-PAK for Surface Mount Applications
Load Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK, "- I" Suffix) Electrically Similar to Popular TIP47 and TIP50
1

D-PAK 1.Base

I-PAK 3.Emitter

2.Collector

NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO Parameter Collector-Emitter Voltage : MJD47 : MJD50 Collector-Emitter Voltage : MJD47 : MJD50 Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC 25 C) Collector Dissipation (Ta 25 C) TJ TSTG Junction Temperature Storage Temperature Value 350 500 250 400 5 1 2 0.6 15 1.56 150 - 65 150 Units V V V V V A A A W W C C

VCEO

VEBO IC ICP IB PC

Electrical Characteristics TC 25 C unless otherwise noted
Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : MJD47 : MJD50 Collector Cut-off Current : MJD47 : MJD50 ICES Collector Cut-off Current : MJD47 : MJD50 IEBO hFE VCE(sat) VBE(sat) fT Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product VCE 350, VEB 0 VCE 500, VEB 0 VBE 5V, IC 0 VCE 10V, IC 0.3A VCE 10V, IC 1A IC 1A, IB 0.2A VCE 10A, IC 1A VCE 10V, IC 0.2A 10 30 10 0.1 0.1 1 150 1 1.5 V V MHz mA mA mA VCE 150V, IB 0 VCE 300V, IB 0 0.2 0.2 mA mA Test Condition IC 30mA, IB 0 Min. 250 400 Max. Units V V

ICEO

Pulse Test: PW300 s, Duty Cycle2%

2001 Fairchild Semiconductor Corporation

Rev. A2, June 2001