MJE180/181/182

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MJE180/181/182

MJE180/181/182
Low Power Audio Amplifier Low Current High Speed Switching Applications

1

TO-126 2.Collector 3.Base

NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO Collector-Base Voltage Parameter : MJE180 : MJE181 : MJE182

1. Emitter

Value 60 80 100 40 60 80 7 3 6 1 1.5 12.5 150 - 65 150

Units V V V V V V V A A A W W C C

VCEO

Collector-Emitter Voltage : MJE180 : MJE181 : MJE182 Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (Ta 25 C) Collector Dissipation (TC 25 C) Junction Temperature Storage Temperature

VEBO IC ICP IB PC PC TJ TSTG

Electrical Characteristics TC 25 C unless otherwise noted
Symbol BVCEO Parameter Collector -Emitter Breakdown Voltage : MJE180 : MJE181 : MJE182 Collector Cut-off Current : MJE180 : MJE181 : MJE182 : MJE180 : MJE181 : MJE182 Emitter Cut-off Current DC Current Gain Test Condition IC 10mA, IB 0 Min. 40 60 80 0.1 0.1 0.1 0.1 0.1 0.1 0.1 50 30 12 250 Max. Units V V V A A A mA mA mA A

ICBO

VCB 60V, IB 0 VCB 80V, IE 0 VCB 100V, IE 0 VCB 60V, IE 0 TC 150 C VCB 80V, IE 0 TC 150 C VCB 100V, IE 0 TC 150 C VBE 7V, IC 0 VCE 1V, IC 100mA VCE 1V, IC 500mA VCE 1V, IC 1.5A IC 500mA, IB 50mA IC 1.5A, IB 150mA IC 3A, IB 600mA IC 1.5A, IB 150mA IC 3A, IB 600mA VCE 1V, IC 500mA VCE 10V, IC 100mA VCB 10V, IE 0, f 0.1MHz 50

IEBO hFE

VCE(sat)

Collector-Emitter Saturation Voltage

0.3 0.9 1.7 1.5 2.0 1.2 30

V V V V V V MHz pF

VBE(sat) VBE(on) fT Cob

Base-Emitter Saturation Voltage Base-Emitter ON Voltage Current Gain Bandwidth Product Output Capacitance

2001 Fairchild Semiconductor Corporation

Rev. A1, February 2001

MJE180 Datasheet Fairchild Download PDF

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MJE180 DATASHEET