MJE200

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MJE200

MJE200
Feature
Low Collector-Emitter Saturation Voltage High Current Gain Bandwidth Product : fT 65MHz IC 100mA (Min.) Complement to MJE210

1

TO-126 2.Collector 3.Base

1. Emitter

NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter- Base Voltage Collector Current Collector Dissipation (TC 25 C) Junction Temperature Storage Temperature Value 40 25 8 5 15 150 - 65 150 Units V V V A W C C

Electrical Characteristics TC 25 C unless otherwise noted
Symbol BVCEO ICBO IEBO hFE Parameter Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Test Condition IC 10mA, IB 0 VCB 40V, IE 0 VCB 40V, IE 0 TJ 125 C VBE 8V, IC 0 VCE 1V, IC 500mA VCE 1V, IC 2A VCE 2V, IC 5A IC 500mA, IB 50mA IC 2A, IC 200mA IC 5A, IB 1A IC 5A, IB 1A VCE 1V, IC 2A VCE 10V, IC 100mA VCB 10V, IE 0, f 0.1MHz 65 80 70 45 10 Min. 25 Max. 100 100 100 180 0.3 0.75 1.8 2.5 1.6 V V V V V MHz pF Units V nA A nA

VCE(sat)

Collector-Emitter Saturation Voltage

VBE(sat) VBE(on) fT Cob

Base- Emitter Saturation Voltage Base-Emitter ON Voltage Current Gain Bandwidth Product Output Capacitance

2001 Fairchild Semiconductor Corporation

Rev. A2, June 2001

MJE200 Datasheet Fairchild Download PDF

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MJE200 DATASHEET