MJE210

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MJE210

MJE210
Feature
Low Collector-Emitter Saturation Voltage High Current Gain Bandwidth Product : fT 65MHz IC -100mA (Min.) Complement to MJE200

TO-126 2.Collector 3.Base

1. Emitter

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation (TC 25 C) Junction Temperature Storage Temperature Value - 40 - 25 -8 -5 15 150 - 65 150 Units V V V A W C C

Electrical Characteristics TC 25 C unless otherwise noted
Symbol BVCEO ICBO IEBO hFE1 hFE2 hFE3 VCE(sat) Parameter Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Test Condition IC - 10mA, IB 0 VCB -40V, IE 0 VCB - 40V, IE 0 TJ 125 C VBE - 8V, IC 0 VCE - 1V, IC - 500mA VCE - 1V, IC - 2A VCE - 2V, IC - 5A IC - 500mA, IB - 50mA IC - 2A, IC - 200mA IC - 5A, IB - 1A IC - 5A, IB - 1A VCE - 1V, IC - 2A VCE - 10V, IC - 100mA VCB - 10V, IE 0, f 1MHz 65 120 70 45 10 Min. -25 Max. -100 -100 -100 180 -0.3 -0.75 -1.8 -2.5 -1.6 V V V V V MHz pF Units V nA A nA

Collector-Emitter Saturation Voltage

VBE(sat) VBE(on) fT Cob

Base-Emitter Saturation Voltage Base-Emitter ON Voltage Current Gain Bandwidth Product Output Capacitance

2001 Fairchild Semiconductor Corporation

Rev. A1, February 2001