MJE3055T

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MJE3055T

MJE3055T
General Purpose and Switching Applications
DC Current Gain Specified to IC 10A High Current Gain-Bandwidth Product : fT 2MHz (Min.)

TO-220 2.Collector 3.Emitter

1.Base

NPN Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC IB PC PC TJ TSTG Parameter Collector -Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation (TC 25 C) Collector Dissipation (Ta 25 C) Junction Temperature Storage Temperature Value 70 60 5 10 6 75 0.6 150 - 55 150 Units V V V A A W W C C

Electrical Characteristics TC 25 C unless otherwise noted
Symbol BVCEO ICEO ICEX1 ICEX2 IEBO hFE VCE(sat) VBE (on) fT Parameter Collector-Emitter Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Test Condition IC 200mA, IB 0 VCE 30V, IB 0 VCE 70V, VBE(off) -1.5V VCE 70V, VBE(off) -1.5V TC 150 C VEB 5V, IC 0 VCE 4V, IC 4A VCE 4V, IC 10A IC 4A, IB 0.4A IC 10A, IB 3.3A VCE 4V, IC 4A VCE 10V, IC 500mA 2 20 5 Min. 60 Max. 700 1 5 5 100 1.1 8 1.8 V V V MHz Units V A mA mA mA

Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product

Pulse test: PW300 s, duty cycle2% Pulse

2001 Fairchild Semiconductor Corporation

Rev. A1, February 2001