MJE340

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MJE340

MJE340
High Voltage General Purpose Applications
High Collector-Emitter Breakdown Voltage Suitable for Transformer Complement to MJE350

TO-126 2.Collector 3.Base

1. Emitter

NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation (TC 25 C) Junction Temperature Storage Temperature Value 300 300 5 500 20 150 - 65 150 Units V V V mA W C C

Electrical Characteristics TC 25 C unless otherwise noted
Symbol BVCEO ICBO IEBO hFE Parameter Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Test Condition IC 1mA, IB 0 VCB 300V, IE 0 VBE 3V, IC 0 VCE 10V, IC 50mA 30 Min. 300 Max. 100 100 240 Units V A A

2001 Fairchild Semiconductor Corporation

Rev. A1, February 2001