MJE700/701/702/703

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MJE700/701/702/703

MJE700/701/702/703
Monolithic Construction With Built-in BaseEmitter Resistors
High DC Current Gain : hFE 750 (Min.) IC -1.5 and -2.0A DC Complement to MJE800/801/802/803

1

TO-126 2.Collector 3.Base

1. Emitter

PNP Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector- Base Voltage : MJE700/701 : MJE702/703 Value - 60 - 80 - 60 - 80 -5 -4 - 0.1 40 150 - 55 150 Unit s V V V V V A A W C C
R1 R2 E Equivalent Circuit C

B

Collector-Emitter Voltage : MJE700/701 : MJE702/703 Emitter- Base Voltage Collector Current Base Current Collector Dissipation (TC 25 C) Junction Temperature Storage Temperature

R 1 10 k R 2 0.6 k

Electrical Characteristics TC 25 C unless otherwise noted
Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : MJE700/701 : MJE702/703 Collector Cut-off Current : MJE700/701 : MJE702/703 Collector Cut-off Current Test Condition IC - 10mA, IB 0 Min. -60 -80 -100 -100 -100 -500 -2 750 750 100 -2.5 -2.8 -3 -1.2 -2.5 -3 V V V V V V Max. Units V V A A A A mA

ICEO

VCE - 60V, IB 0 VCE - 80V, IB 0 VCB Rated BVCEO, IE 0 VCB Rated BVCEO, IE 0 TC 100 C VBE - 5V, IC 0 VCE - 3V, IC - 1.5A VCE - 3V, IC - 2A VCE - 3V, IC - 4A IC - 1.5A, IB - 30mA IC - 2A, IB - 40mA IC - 4A, IB - 40mA VCE - 3V, IC - 1.5A VCE - 3V, IC - 2A VCE - 3V, IC - 4A

ICBO

IEBO hFE

Emitter Cut-off Current DC Current Gain : MJE700/702 : MJE701/703 : ALL DEVICES

VCE(sat)

Collector-Emitter Saturation Voltage : MJE700/702 : MJE701/703 : ALL DEVICES Base-Emitter On Voltage : MJE700/702 : MJE701/703 : ALL DEVICES

VBE(on)

2001 Fairchild Semiconductor Corporation

Rev. A1, February 2001

MJE700 Datasheet Fairchild Download PDF

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MJE700 DATASHEET