MJE800/801/802/803

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MJE800/801/802/803

MJE800/801/802/803
Monolithic Construction With Built-in BaseEmitter Resistors
High DC Current Gain : hFE 750 (Min.) IC 1.5 and 2.0A DC Complement to MJE700/701/702/703

1

TO-126 2.Collector 3.Base

1. Emitter

NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation (TC 25 C) Junction Temperature Storage Temperature : MJE800/801 : MJE802/803 : MJE800/801 : MJE802/803 Value 60 80 60 80 5 4 0.1 40 150 - 55 150 Units V V V V V A A W C C
R1 R2 E B Equivalent Circuit C

R 1 10 k R 2 0.6 k

Electrical Characteristics TC 25 C unless otherwise noted
Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : MJE800/801 : MJE802/803 Collector Cut-off Current : MJE800/801 : MJE802/803 Collector Cut-off Current Test Condition IC 50mA, IB 0 Min. 60 80 VCE 60V, IB 0 VCE 80V, IB 0 VCB Rated BVCEO, IE 0 VCB Rated BVCEO, IE 0 TC 100 C VBE 5V, IC 0 VCE 3V, IC 1.5A VCE 3V, IC 2A VCE 3V, IC 4A IC 1.5A, IB 30mA IC 2A, IB 40mA IC 4A, IB 40mA VCE 3V, IC 1.5A VCE 3V, IC 2A VCE 3V, IC 4A 750 750 100 2.5 2.8 3 2.5 2.5 3 V V V V V V 100 100 100 500 2 Max. Units V V A A A A mA

ICEO

ICBO

IEBO hFE

Emitter Cut-off Current DC Current Gain : MJE800/802 : MJE801/803 : ALL DEVICES

VCE(sat)

Collector-Emitter Saturation Voltage : MJE800/802 : MJE801/803 : ALL DEVICES Base-Emitter ON Voltage : MJE800/802 : MJE801/803 : ALL DEVICES

VBE(on)

2001 Fairchild Semiconductor Corporation

Rev. A1, February 2001

MJE801 Datasheet Fairchild Download PDF

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MJE801 DATASHEET