MMBD914

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MMBD914

MMBD914
3 3 2 1 1

Connection Diagram
3

5D
2 1 2NC

SOT-23

Small Signal Diode
Absolute Maximum Ratings
Symbol
VRRM IF(AV) IFSM
TA 25 C unless otherwise noted

Parameter
Maximum Repetitive Reverse Voltage Average Rectified Forward Current Non-repetitive Peak Forward Surge Current Pulse Width 1.0 second Pulse Width 1.0 microsecond Storage Temperature Range Operating Junction Temperature

Value
100 200 1.0 2.0 -55 to 150 150

Units
V mA A A C C

Tstg TJ

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol
PD RJA Power Dissipation Thermal Resistance, Junction to Ambient
TA 25 C unless otherwise noted

Parameter

Value
350 357

Units
mW C/W

Electrical Characteristics
Symbol
VR VF IR

Parameter
Breakdown Voltage Forward Voltage Reverse Current

Test Conditions
IR 5.0 A IR 100 A IF 10 mA VR 20 V VR 20 V, TA 150 C VR 75 V VR 0, f 1.0 MHz IF 10 mA, VR 6.0V, IRR 1.0 mA, RL 100 IF 50 mA PEAK SQUARE WAVE PULSE WIDTH 0.1 S 5 kHz 100 kHz REP RATE

Min
75 100

Max

Units
V V V nA A A pF ns V

1.0 25 50 5.0 4.0 4.0 2.5

CT trr VFR

Total Capacitance Reverse Recovery Time Peak Forward Recovery Voltage

2001 Fairchild Semiconductor Corporation

MMBD914, Rev. C

MMBD914 Datasheet Fairchild Download PDF

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MMBD914 DATASHEET