MMBF4117

PN4117 / 4118 / 4119 / MMBF4117 / 4118 / 4119

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PN4117 / 4118 / 4119 / MMBF4117 / 4118 / 4119

PN4117 PN4118 PN4119

MMBF4117 MMBF4118 MMBF4119
G

S G S

TO-92
D

SOT-23
Mark: 61A / 61C / 61E

NOTE: Source Drain are interchangeable

N-Channel Switch
This device is designed for low current DC and audio applications. These devices provide excellent performance as input stages for sub-picoamp instrumentation or any high impedance signal sources. Sourced from Process 53.

Absolute Maximum Ratings
Symbol
VDG VGS IGF TJ ,Tstg Drain-Gate Voltage Gate-Source Voltage Forward Gate Current

TA 25 C unless otherwise noted

Parameter

Value
40 - 40 50 -55 to 150

Units
V V mA C

Operating and Storage Junction Temperature Range

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol
PD RJC RJA

TA 25 C unless otherwise noted

Characteristic
Total Device Dissipation Derate above 25 C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient PN4117-4119 350 2.8 125 357

Max
MMBF4117-4119 225 1.8 556

Units
mW mW/ C C/W C/W

Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

1997 Fairchild Semiconductor Corporation