MMBF4416

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MMBF4416

MMBF4416
N-Channel RF Amplifiers
This device is designed for RF amplifiers. Sourced from process 50.
G

S D

SOT-23 Mark: 6A

Absolute Maximum Ratings TA 25 C unless otherwise noted
Symbol VDG VGS IGF TJ, TSTG Parameter Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Junction and Storage Temperature Range Value 30 -30 10 - 55 150 Units V V mA C

Electrical Characteristics TA 25 C unless otherwise noted
Symbol Parameter Test Condition VDS 0, IG 1 A VGS -20V, VDS 0 VGS -20V, VDS 0, TA 150 C VDS 15V, ID 1nA VDS 15V, ID 0.5mA VGS 15V, VGS 0 VDS 0, IG 1mA VDS 15V, VGS 0, f 1KHz VDS 15V, VGS 0, f 1KHz VDS 15V, VGS 0, f 1MHz VDS 15V, VGS 0, f 1MHz VDS 15V, VGS 0, f 1MHz VDS 15V, ID 5mA, Rg 100, f 100MHz VDS 15V, ID 5mA, Rg 100, f 100MHz 18 4500 -2.5 -1 5 Min. -30 -1 -200 -6 -5.5 15 1 7500 50 4 0.9 2 2 Typ. Max. Units V nA nA V V A V mhos mhos
PF PF PF

Off Characteristics V(BR)GSS Gate-Source Breakdown Voltage IGSS VGS(off) VGS Gate Reverse Current Gate Source Cut-off Voltage Gate Source Voltage

On Characteristics Zero-Gate Voltage Drain Current IDSS VGS(f) Gate-Source Forward Voltage Small Signal Characteristics lYfsl Forward Transfer Admittance lyosl Ciss
Crss

Output Admittance Input Capacitance Reverse Transfer Capacitance Output Capacitance

Coss

Functional Characteristics NF Noise Figure Gps Common Source Power Gain

dB dB

Thermal Characteristics TA 25 C unless otherwise noted
Symbol PD RJA Parameter Total Device Dissipation Derate above 25 C Thermal Resistance, Junction to Ambient Max. 225 1.8 556 Units mW mW/ C C/W

Device mounted on FR-4 PCB 1.6" 1.6" 0.06".

2002 Fairchild Semiconductor Corporation

Rev. B1, November 2002