MMBF4416A

MMBF4416A N-Channel RF Amplifier

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MMBF4416A N-Channel RF Amplifier

March 2005

MMBF4416A
N-Channel RF Amplifier
This device is designed for RF amplifiers. Sourced from process 50.

S D

SOT-23 Mark: 6BG

Absolute Maximum Ratings
Symbol
VDG VGS IGF TJ, TSTG
NOTES:

Ta 25 C unless otherwise noted

Parameter
Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range

Value
35 -35 10 - 55 150

Units
V V mA C

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics T 25 C unless otherwise noted
a

Symbol
Off Characteristics V(BR)GSS IGSS VGS(off) VGS IDSS VGS(f) gfs gos Ciss Crss Coss NF

Parameter
Gate-Source Breakdown Voltage Gate Reverse Current Gate Source Cut-off Voltage Gate Source Voltage

Test Condition
VDS 0, IG 1.0 A VGS -20V, VDS 0 VDS 15V, ID 1.0nA VDS 15V, ID 500 A VGS 15V, VGS 0 VDS 0, IG 1.0mA VDS 15V, VGS 0, f 1.0kHz VDS 15V, VGS 0, f 1.0kHz VDS 15V, VGS 0, f 1.0MHz VDS 15V, VGS 0, f 1.0MHz VDS 15V, VGS 0, f 1.0MHz VDS 15V, VGS 0, ID 5mA, Rg 1k, f 400MHz

Min.
-35

Typ.

Max.

Units
V

-100 -2.5 -1 -6.0 -5.5

pA V V

On Characteristics Zero-Gate Voltage Drain Current Gate-Source Forward Voltage 5 15 1 mA V mhos mhos pF pF pF dB

Small Signal Characteristics Forward Transfer Conductance Output Conductance Input Capacitance Reverse Transfer Capacitance Output Capacitance Noise Figure 4500 7500 50 4.0 0.8 2.0 4.0

Pulse Test: Pulse Width 300ms, Duty Cycle 2%

2005 Fairchild Semiconductor Corporation

www.fairchildsemi.com

MMBF4416A Rev. A2