MMBF5103

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MMBF5103

MMBF5103
N-Channel Switch
This device is designed for low level analog switching, sample and hold circuits and chopper stabailzed amplifiers. Sourced from Process 51. See J111 for characteristics.
G

S D

SOT-23
Mark: 66A

1. Drain 2. Source 3. Gate

Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VDG VGS IGF TJ, TSTG Parameter Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range Value 40 -40 50 - 55 150 Units V V mA C

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol Off Characteristics V(BR)GSS IGSS VGS(off) VGS(f) IDSS CISS Crss Parameter Test Condition IG 1.0 A, VDS 0 VGS -15V, VDS 0 VGS -15V, VDS 0, Ta 125 C VDS 20V, ID 1.0nA IG 1.0mA, VDS 0 VDS 15V, VGS 0 VDS 15V, VGS 0, f 1.0MHz VGS -15V, f 1.0MHz 10 -1.2 Min. -40 -200 -500 -2.7 1.0 40 16 6.0 Max. Units V pA nA V V mA pF pF Gate-Source Breakdown Voltage Gate Reverse Current Gate-Source Cutoff Voltage Gate-Source Forward Voltage Zero-Gate Voltage Drain Current Input Capacitance Reverse Transfer Capacitance

On Characteristics Small Signal Characteristics

Pulse Test: Pulse Width 300 s, Duty Cycle 1.0%

Thermal Characteristics Ta 25 C unless otherwise noted
Symbol PD RJA Parameter Total Device Dissipation Derate above 25 C Thermal Resistance, Junction to Ambient Max. 350 2.8 556 Units mW mW/ C C/W

2003 Fairchild Semiconductor Corporation

Rev. A, September 2003