MMBF5434

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MMBF5434

MMBF5434
N-Channel Switch
This device is designed for digital switching applications where very low on resistance is mandatory. Sourced from Process 58.
3

2 1 SuperSOT-3
Marking: 61Z

1. Drain 2. Source 3. Gate

Absolute Maximum Ratings TA 25 C unless otherwise noted
Symbol VDG VGS IGF TJ, Tstg Parameter Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range Value 25 -25 10 -55 150 Units V V mA C

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics TA 25 C unless otherwise noted
Symbol Parameter Test Condition IG -1.0 A, VDS 0 VGS -15V, VDS 0 VDS 5.0V, ID 3.0nA VDS 5.0, VGS -10V VDS 15V, IGS 0 VDS 0, ID 10mA VDS 0, VGS 10V, f 1.0MHz VDS 0, VGS 10V, f 1.0MHz 30 10 30 15 -1.0 Min. -25 200 -4.0 200 Max. Units V nA V pA mA pF pF Off Characteristics Gate-Source Breakdwon Voltage V(BR)GSS IGSS VGS(off) ID(off) IDSS rDS(on) Ciss Crss Gate Reverse Current Gate-Source Cutoff Voltage Drain Cutoff Voltag Zero-Gate Voltage Drain Current Drain-Source On Resistance Input Capacitance Reverse Transfer Capacitance

On Characteristics

Small Signal Characteristics

Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%

2003 Fairchild Semiconductor Corporation

Rev. A, February 2003