MMBFJ108

J108/J109/J110/MMBFJ108

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J108/J109/J110/MMBFJ108

J108/J109/J110/MMBFJ108
N-Channel Switch
This device is designed for digital switching applications where very low on resistance is mandatory. Sourced from Process 58.
1 TO-92 3

2 SuperSOT-3 Marking: I8 1. Drain 2. Source 3. Gate 1

1. Drain 2. Source 3. Gate

Absolute Maximum Ratings TA 25 C unless otherwise noted
Symbol VDG VGS IGF TJ, Tstg Parameter Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range Value 25 -25 10 -55 150 Units V V mA C

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics TA 25 C unless otherwise noted
Symbol Parameter Test Condition IG -10 A, VDS 0 VGS -15V, VDS 0 VGS -15V, VDS 0, TA 100 C VDS 15V, ID 10nA 108 109 110 108 109 110 108 109 110 -3.0 -2.0 -0.5 80 40 10 8.0 12 18 85 15 15 Min. -25 -3.0 -200 -10 -6.0 -4.0 Max. Units V nA nA V V V mA mA mA pF pF pF Off Characteristics Gate-Source Breakdwon Voltage V(BR)GSS IGSS VGS(off) Gate Reverse Current Gate-Source Cutoff Voltage

On Characteristics IDSS Zero-Gate Voltage Drain Current VDS 15V, IGS 0

rDS(on)

Drain-Source On Resistance

VDS 0.1V, VGS 0

Small Signal Characteristics Cdg(on) Csg(off) Cdg(on) Csg(off) Drain Gate Source Gate On Capacitance Drain-Gate Off Capacitance Source-Gate Off Capacitance VDS 0, VGS 0, f 1.0MHz VDS 0, VGS -10, f 1.0MHz VDS 0, VGS -10, f 1.0MHz

Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%

2002 Fairchild Semiconductor Corporation

Rev. B1, November 2002