MMBFJ112

J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113

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J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113

J111 J112 J113

MMBFJ111 MMBFJ112 MMBFJ113
G

S G S

TO-92
D

SOT-23
Mark: 6P / 6R / 6S

NOTE: Source Drain are interchangeable

N-Channel Switch
This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 51.

Absolute Maximum Ratings
Symbol
VDG VGS IGF TJ ,Tstg Drain-Gate Voltage Gate-Source Voltage Forward Gate Current

TA 25 C unless otherwise noted

Parameter

Value
35 - 35 50 -55 to 150

Units
V V mA C

Operating and Storage Junction Temperature Range

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol
PD RJC RJA

TA 25 C unless otherwise noted

Characteristic
Total Device Dissipation Derate above 25 C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient J111-113 625 5.0 125 357

Max
MMBFJ111-113 350 2.8 556

Units
mW mW/ C C/W C/W

Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

2001 Fairchild Semiconductor Corporation

J111/112/113/MMBFJ111/112/113, Rev A