MMBFJ212

J210 / J211 / J212 / MMBFJ210 / MMBFJ211 / MMBFJ212

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J210 / J211 / J212 / MMBFJ210 / MMBFJ211 / MMBFJ212

J210 J211 J212

MMBFJ210 MMBFJ211 MMBFJ212
G

S G S

TO-92
D

SOT-23
Mark: 62V / 62W / 62X

NOTE: Source Drain are interchangeable

N-Channel RF Amplifier
This device is designed for HF/VHF mixer/amplifier and applications where Process 50 is not adequate. Sufficient gain and low noise for sensitive receivers. Sourced from Process 90.

Absolute Maximum Ratings
Symbol
VDG VGS IGF TJ ,Tstg Drain-Gate Voltage Gate-Source Voltage Forward Gate Current

TA 25 C unless otherwise noted

Parameter

Value
25 - 25 10 -55 to 150

Units
V V mA C

Operating and Storage Junction Temperature Range

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol
PD RJC RJA

TA 25 C unless otherwise noted

Characteristic
Total Device Dissipation Derate above 25 C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient J210-212 350 2.8 125 357

Max
MMBFJ210-212 225 1.8 556

Units
mW mW/ C C/W C/W

Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

1997 Fairchild Semiconductor Corporation

J210/J211/J212/MMBFJ210/J211/J212, Rev A