MMBFJ271

MMBFJ271 P-Channel Switch

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MMBFJ271 P-Channel Switch

June 2006

MMBFJ271
P-Channel Switch
Features
This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. Sourced from process 88.
S D G

SOT-23
Mark : 62T

Absolute Maximum Ratings
Symbol
VDG VGS IGF TJ, TSTG Drain-Gate Voltage Gate-Source Voltage Forward Gate Current

Ta 25 C unless otherwise noted

Parameter

Value
-30 30 50 -55 150

Units
V V mA C

Operating and Storage Junction Temperature Range

These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. - These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations

Thermal Characteristics
Symbol
PD RJA

Parameter
Total Device Dissipation Derate above 25 C Thermal Resistance, Junction to Ambient

Value
225 1.8 556

Units
mW mW/ C C/W

Note2 : Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch

Electrical Characteristics
Symbol Parameter Off Characteristics (Note3)
V(BR)GSS IGSS VGS(off)

TC 25 C unless otherwise noted

Test Condition

MIN

MAX

Units

Gate-Source Breakdwon Voltage Gate Reverse Current Gate-Source Cutoff Voltage

IG 1.0 A, VDS 0 VGS 20V, VDS 0 VDS -15V, ID -1.0nA

30 200 1.5 4.5

V pA V

On Characteristics (Note3)
IDSS gfs goss Zero-Gate Voltage Drain Current Forward Transferconductance VDS -15V, VGS 0 VGS 0V, VDS 15V, f 1.0kHz -6.0 8000 -50 18000 500 mA mhos mhos

Common- Source Output Conduc- VGS 0V, VDS 15V, f 1.0kHz tance

Note3 : Short duration test pulse used to minimize self-heating effect.

2006 Fairchild Semiconductor Corporation

www.fairchildsemi.com

MMBFJ271 Rev. A