MMBFJ310

J309 / J310 / MMBFJ309 / MMBFJ310

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J309 / J310 / MMBFJ309 / MMBFJ310

J309 J310

MMBFJ309 MMBFJ310
G

S G S

TO-92
D

SOT-23
Mark: 6U / 6T

NOTE: Source Drain are interchangeable

N-Channel RF Amplifier
This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized. Sourced from Process 92.

Absolute Maximum Ratings
Symbol
VDS VGS IGF TJ ,Tstg Drain-Source Voltage Gate-Source Voltage Forward Gate Current

TA 25 C unless otherwise noted

Parameter

Value
25 - 25 10 -55 to 150

Units
V V mA C

Operating and Storage Junction Temperature Range

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol
PD RJC RJA

TA 25 C unless otherwise noted

Characteristic
Total Device Dissipation Derate above 25 C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient J309-J310 625 5.0 125 357

Max
MMBFJ309-310 350 2.8 556

Units
mW mW/ C C/W C/W

Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

1997 Fairchild Semiconductor Corporation