MMBT100A

PN100/PN100A/MMBT100/MMBT100A

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PN100/PN100A/MMBT100/MMBT100A

PN100/PN100A/MMBT100/MMBT100A
NPN General Purpose Amplifier
This device is designed for general purpose amplifier applications at collector currents to 300mA. Sourced from process 10.
1 TO-92 3 2 1 SOT-23

1. Emitter 2. Base 3. Collector Mark: PN100/PN100A

1. Base 2. Emitter 3. Collector Mark: N1/N1A

Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCEO VCBO VEBO IC TJ, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector current Junction and Storage Temperature - Continuous Value 45 75 6.0 500 -55 150 Units V V V mA C

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics TC 25 C unless otherwise noted
Symbol Parameter Test Condition IC 10 A, IE 0 IC 1mA, IB 0 IE 10 A, IC 0 VCB 60V VCE 40V VEB 4V IC 100 A, VCE 1.0V IC 10mA, VCE 1.0V IC 100mA, VCE 1.0V IC 150mA, VCE 5.0V VCE(sat) VBE(sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage IC 10mA, IB 1.0mA IC 200mA, IB 20mA IC 10mA, IB 1.0mA IC 200mA, IB 20mA VCE 20V, IC 20mA VCB 5.0V, f 1.0MHz IC 100 A, VCE 5.0V RG 2.0k, f 1.0KHz 100 100A 250 4.5 5.0 4.0 100 100A 100 100A 100 100A 80 240 100 300 100 100 100 Min. 75 45 6.0 50 50 50 Max. Units V V V nA nA nA Off Characteristics BVCBO Collector-Base Breakdown Voltage BVCEO BVEBO ICBO ICES IEBO hFE Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Collector-Emiitter Cutoff Current Emitter Cutoff Current DC Current Gain

On Characteristics

450 600 350 0.2 0.4 0.85 1.0 V V V V MHz pF dB dB

Small Signal Characteristics fT Cobo NF Current Gain Bandwidth Product Output Capacitance Noise Figure

Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%

2002 Fairchild Semiconductor Corporation

Rev. B1, August 2006