PN200 / MMBT200 / PN200A / MMBT200A

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PN200 / MMBT200 / PN200A / MMBT200A

PN200 PN200A

MMBT200 MMBT200A
C

E C B

TO-92
E

SOT-23
Mark: N2 / N2A

B

PNP General Purpose Amplifier
This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68.

Absolute Maximum Ratings
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Collector-Emitter Voltage

TA 25 C unless otherwise noted

Parameter

Value
45 60 6.0 500 -55 to 150

Units
V V V mA C

Operating and Storage Junction Temperature Range

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors.

Thermal Characteristics
Symbol

TA 25 C unless otherwise noted

Characteristic
PN200 PN200A 625 5.0 83.3 200

Max
MMBT200 MMBT200A 350 2.8 357

Units

PD RJC RJA

Total Device Dissipation Derate above 25 C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient

mW mW/ C C/W C/W

Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

1997 Fairchild Semiconductor Corporation

MMBT200 Datasheet Fairchild Download PDF

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MMBT200 DATASHEET