MMBT2222

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MMBT2222

MMBT2222
NPN General Purpose Amplifier
Sourced from process 19.
C

E B

SOT-23 Mark: 1B

Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Ratings 30 60 5.0 0.6 -55 150 Units V V V A C

This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol Off Characteristics V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO hFE Parameter Test Condition IC 10mA, IB 0 IC 10 A, IE 0 IE 10 A, IC 0 VCB 50V, IE 0 VCB 50V, IE 0, Ta 125 C VEB 3.0V, IC 0 IC 0.1mA, VCE 10V IC 1.0mA, VCE 10V IC 10mA, VCE 10V IC 150mA, VCE 10V IC 150mA, VCE 1.0V IC 500mA, VCE 10V IC 150mA, IB 15V IC 500mA, IB 50V IC 150mA, IB 15V IC 500mA, IB 50V 35 50 75 100 50 30 Min. 30 60 5.0 10 10 10 Max. Units V V V A A nA Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain

On Characteristics

300

VCE(sat) VBE(sat)

Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage

0.4 1.6 1.3 2.6

V V

2004 Fairchild Semiconductor Corporation

Rev. B, May 2004

MMBT2222 Datasheet Fairchild Download PDF

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MMBT2222 DATASHEET