PN2222A

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PN2222A

MMBT2222A
C

PZT2222A
C

E

E C

TO-92
EBC

SOT-23
Mark:1P

B

SOT-223

B

NPN General Purpose Amplifier
This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from process 19.

Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VCEO VCBO VEBO IC TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Operating and Storage Junction Temperature Range Value 40 75 6.0 1.0 - 55 150 Units V V V A C

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol Off Characteristics BV(BR)CEO BV(BR)CBO BV(BR)EBO ICEX ICBO IEBO IBL hFE Parameter Test Condition IC 10mA, IB 0 IC 10 A, IE 0 IE 10 A, IC 0 VCE 60V, VEB(off) 3.0V VCB 60V, IE 0 VCB 60V, IE 0, Ta 125 C VEB 3.0V, IC 0 VCE 60V, VEB(off) 3.0V IC 0.1mA, VCE 10V IC 1.0mA, VCE 10V IC 10mA, VCE 10V IC 10mA, VCE 10V, Ta -55 C IC 150mA, VCE 10V IC 150mA, VCE 10V IC 500mA, VCE 10V IC 150mA, VCE 10V IC 500mA, VCE 10V IC 150mA, VCE 10V IC 500mA, VCE 10V 0.6 35 50 75 35 100 50 40 Min. 40 75 6.0 10 0.01 10 10 20 Max. Units V V V nA A A A A Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Base Cutoff Current DC Current Gain

On Characteristics

300

VCE(sat) VBE(sat)

Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage

0.3 1.0 1.2 2.0

V V V V

Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%

2004 Fairchild Semiconductor Corporation

Rev. A1, August 2004

MMBT2222A Datasheet Fairchild Download PDF

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MMBT2222A DATASHEET