MMBT2222AK

MMBT2222AK NPN Epitaxial Silicon Transistor

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MMBT2222AK NPN Epitaxial Silicon Transistor

MMBT2222AK
NPN Epitaxial Silicon Transistor General Purpose Transistor

Marking

2 1

1PK

SOT-23

1. Base 2. Emitter 3. Collector

Absolute Maximum Ratings
Symbol
VCBO VCEO VEBO IC PC TJ, TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

Ta 25 C unless otherwise noted

Parameter

Value
75 40 6 600 350 -55 150

Units
V V V mA mW C

Collector Power Dissipation Operating Junction and Storage Temperature Range

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol
BVCBO BVCEO BVEBO ICBO hFE

Parameter
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain

Test Condition
IC 10 A, IE 0 IC 10mA, IB 0 IE 10 A, IC 0 VCB 60V, IE 0 VCE 10V, IC 0.1mA VCE 10V, IC 1mA VCE 10V, IC 10mA VCE 10V, IC 150mA VCE 10V, IC 500mA IC 150mA, IB 15mA IC 500mA, IB 50mA IC 150mA, IB 15mA IC 500mA, IB 50mA IC 20mA, VCE 20V, f 100MHz VCB 10V, IE 0, f 1MHz IC 100 A, VCE 10V RS 1K, f 1MHz VCC 30V, IC 150mA VBE 0.5V, IB1 15mA VCC 30V, IC 150mA, IB1 IB2 15mA

Min.
75 40 6

Max. Units
V V V 0.01 A

35 50 75 100 40

300 0.3 1.0 V V V V MHz 8 4 35 285 pF dB ns ns

VCE (sat) VBE (sat) fT Cob NF tON tOFF

Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure Turn On Time Turn Off Time

0.6 300

1.2 2.0

Pulse Test: Pulse Width300 s, Duty Cycle2%

2006 Fairchild Semiconductor Corporation

www.fairchildsemi.com

MMBT2222AK Rev. B