MMBT2369

MMBT2369 NPN Switching Transistor

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MMBT2369 NPN Switching Transistor

MMBT2369
NPN Switching Transistor
This device is designed for high speed saturated switching at collector currents of 10mA to 100mA. Sourced from process 21.

E B

SOT-23 Mark: 1J

Absolute Maximum Ratings T
Symbol
VCEO VCBO VEBO IC TJ, TSTG
NOTES:

25 C unless otherwise noted

Parameter
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous

Ratings
15 40 4.5 200 -55 150

Units
V V V mA C

Operating and Storage Junction Temperature Range

This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics
Symbol
Off Characteristics V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICBO

Ta 25 C unless otherwise noted

Parameter
Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current

Test Condition
IC 10mA, IB 0 IC 10 A, VBE 0 IC 10 A, IE 0 IE 10 A, IC 0 VCB 20V, IE 0 VCB 20V, IE 0, Ta 125 C IC 10mA, VCE 1.0V IC 100mA, VCE 2.0V IC 10mA, IB 1.0mA IC 10mA, IB 1.0mA VCB 5.0V, IE 0, f 1.0MHz VEB 0.5V, IC 0, f 1.0MHz IC 10mA, VCE 10V, RG 2.0k, f 100MHz

Min.
15 40 40 4.5

Max.

Units
V V V V A A

0.4 30

On Characteristics hFE VCE(sat) VBE(sat) Cobo Cibo hfe DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 40 20 120 0.25 0.7 0.85 V V

Small Signal Characteristics Output Capacitance Input Capacitance Small -Signal Current Gain 4.0 5.0 5.0 pF pF

2005 Fairchild Semiconductor Corporation

www.fairchildsemi.com

MMBT2369 Rev. B