MMBT2369A

PN2369A / MMBT2369A

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PN2369A / MMBT2369A

PN2369A

MMBT2369A
C

E C B

TO-92
E

SOT-23
Mark: 1S

NPN Switching Transistor
This device is designed for high speed saturated switching at collector currents of 10 mA to 100 mA. Sourced from Process 21.

Absolute Maximum Ratings
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous

TA 25 C unless otherwise noted

Parameter

Value
15 40 4.5 200 -55 to 150

Units
V V V mA C

Operating and Storage Junction Temperature Range

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol
PD RJC RJA

TA 25 C unless otherwise noted

Characteristic
Total Device Dissipation Derate above 25 C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient PN2369A 350 2.8 125 357

Max
MMBT2369A 225 1.8 556

Units
mW mW/ C C/W C/W

Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

1997 Fairchild Semiconductor Corporation